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Same model may have multiple batches, images only for reference.
SI7390DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7390DP-T1-GE3

Part No SI7390DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
SI7390DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 211667-SI7390DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7390DP-T1-GE3 CAD Model

Description

The Vishay 329850 is a MOSFET semiconductor product that is designed for use in a variety of electronic applications.

  • Channel Type: N-Channel polarity
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 1.8W @ Ta
  • Continuous Drain Current: up to 9A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds On: 9.5 mOhm @ 15A, 10V
  • Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9773 $59.3190
75+ $1.6225 $121.6875
115+ $1.5717 $180.7455
155+ $1.5211 $235.7705
200+ $1.4703 $294.0600
265+ $1.3182 $349.3230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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