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Same model may have multiple batches, images only for reference.
SI7404DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7404DN-T1-GE3

Part No SI7404DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A PPAK 1212-8
Datasheet
SI7404DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 13.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 042622-SI7404DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7404DN-T1-GE3 CAD Model

Description

The SI7404DN-T1-GE3 is an N-channel MOSFET manufactured by Vishay.

  • Win Source Part Number: 042622
  • Package: PowerPAK 1212-8
  • Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 8.5A (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 30nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 13 mOhm @ 13.3A, 10V
  • Supply and Demand Status: Limited
  • Temperature Range - Operating: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 14,583 pieces
MOQ: 18 pcs
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