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SI7461DP-T1-GE3

Part No SI7461DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 8.6A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 190nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 14.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028648-SI7461DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI7461DP-T1-GE3 CAD Model

Description

The SI7461DP-T1-GE3 is a P-Channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 8.6A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 190nC @ 10V
  • Maximum Rds On at Id,Vgs: 14.5 mOhm @ 14.4A, 10V
  • Package: PowerPAK SO-8
  • Mounting: Surface mountable
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: reel - TR
  • Dimensions: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4256 $57.0240
75+ $1.3354 $100.1550
120+ $1.2903 $154.8360
170+ $1.2000 $204.0000
220+ $1.1549 $254.0780
275+ $1.1098 $305.1950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 185,990 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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