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SI7463DP-T1-E3 Real Image SI7463DP-T1-E3 real image5490 SI7463DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI7463DP-T1-E3 Real Image SI7463DP-T1-E3 real image5490 SI7463DP-T1-E3 Real Image
SI7463DP-T1-E3 Real Image SI7463DP-T1-E3 real image5490 SI7463DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7463DP-T1-E3

Part No SI7463DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 11A PPAK SO-8
Datasheet
SI7463DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 140nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 9.2 mOhm @ 18.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028649-SI7463DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7463DP-T1-E3 CAD Model

Description

The Vishay 028649-SI7463DP-T1-E3 is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 40V and a Continuous Drain Current at 25°C of 11A (Ta).

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On at Id,Vgs: 9.2 mOhm @ 18.6A, 10V
  • Power Dissipation (Max): 1.9W (Ta)
  • Package: PowerPAK SO-8
  • Maximum Gate-Source Voltage: ±20V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Mounting Technology: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
2+ $43.9850 $87.9700
3+ $36.0903 $108.2709
5+ $34.9625 $174.8125
6+ $33.8346 $203.0076
8+ $32.7068 $261.6544
11+ $29.3234 $322.5574
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