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Same model may have multiple batches, images only for reference.
SI7501DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7501DN-T1-GE3

Part No SI7501DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5.4A 1212-8 / Trans MOSFET N/P-CH 30V 5.4A 8-Pin PowerPAK 1212 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Part Status Obsolete(EOL)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 5.4A, 4.5A
Rds On (Maximum) @ Id, Vgs 35 mOhm @ 7.7A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 14nC @ 10V
Power - Max 1.6W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package PowerPAK 1212-8 Dual
Manufacturer Package PowerPAK 1212-8 Dual
Win Source Part Number 794316-SI7501DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SI7501DN
Introduction Date April 04, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7501DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7501DN-T1-GE3 is a power MOSFET designed for discrete semiconductor products.

  • Part of the TrenchFET Series: TrenchFET
  • N and P-Channel, Common Drain Configuration: N and P-Channel, common drain
  • Logic Level Gate Device: Logic level
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8 Dual
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Voltage: 30V
  • ECCN: EAR99
  • Halogen-Free Compliant: Yes

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