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Same model may have multiple batches, images only for reference.
SI7530DP-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI7530DP-T1-E3

Part No SI7530DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 60V 3A PPAK SO-8 / Trans MOSFET N/P-CH 60V 3A/3.2A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Part Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 3A, 3.2A
Rds On (Maximum) @ Id, Vgs 75 mOhm @ 4.6A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Power - Max 1.4W, 1.5W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package PowerPAK SO-8 Dual
Manufacturer Package PowerPAK SO-8 Dual
Win Source Part Number 794317-SI7530DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name SI7530DP
Introduction Date August 28, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7530DP-T1-E3 CAD Model

Description

The Vishay Siliconix SI7530DP-T1-E3 is a TrenchFET series N and P-Channel FET.

  • Continuous Drain Current: 3A/3.2A
  • Maximum Power: 1.4W/1.5W
  • Drain Source Voltage: 60V
  • Gate Threshold Voltage: 3V @ 250μA
  • Logic Level Gate: Logic level
  • Mounting: SMD
  • Package/Case: PowerPAK SO-8 Dual
  • Family Name: SI7530DP
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1268 $59.4092
46+ $2.5656 $118.0176
70+ $2.4855 $173.9850
97+ $2.4053 $233.3141
125+ $2.3252 $290.6500
167+ $2.0845 $348.1115
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