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Same model may have multiple batches, images only for reference.
SI6924AEDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6924AEDQ-T1-E3

Part No SI6924AEDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 28V 4.1A 8-TSSOP / Trans MOSFET N-CH 28V 4.1A 8-Pin TSSOP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain Source Voltage 28V
Current - Continuous Drain (Id) @ 25°C 4.1A
Rds On (Maximum) @ Id, Vgs 33 mOhm @ 4.6A, 4.5V
Vgs(th) (Maximum) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 10nC @ 4.5V
Power - Max 1W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-TSSOP (0.173", 4.40mm Width)
Manufacturer Package 8-TSSOP
Win Source Part Number 794304-SI6924AEDQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si6924AEDQ
Introduction Date May 13, 2003
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI6924AEDQ-T1-E3 CAD Model

Description

The Vishay Si6924AEDQ-T1-E3 is a dual N-channel FET with a common drain and a logic level gate.

  • Current-Continuous Drain (Id): 4.1A
  • Power-Max: 1W
  • Package: 8-TSSOP (0.173", 4.40mm Width)
  • Mounting: SMD
  • Drain Source Voltage: 28V
  • Vgs(th) (maximum) @ Id: 1.5V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 10nC @ 4.5V
  • Rds On (maximum) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
  • Supply and Demand: Limited

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