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Same model may have multiple batches, images only for reference.
SI7530DP-T1-GE3
Same model may have multiple batches, images only for reference.

SI7530DP-T1-GE3

Part No SI7530DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 60V 3A/3.2A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 3.2 A
Drain to Source Breakdown Voltage 60 V
Drain to Source Resistance 64 mΩ
Drain to Source Voltage (Vdss) 60 V
Element Configuration Dual
Fall Time 30 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 2
Number of Pins 8
Power Dissipation 3.5 W
Radiation Hardening No
Rds On Max 75 mΩ
Rise Time 9 ns
RoHS Compliant
Turn-Off Delay Time 65 ns
Win Source Part Number 1092938-SI7530DP-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI7530DP-T1-GE3 CAD Model

Description

The Vishay SI7530DP-T1-GE3 is a dual MOSFET transistor with a drain-to-source voltage (Vdss) of 60V.

  • Power Dissipation: 3.5W
  • Rise Time: 9 ns
  • Popularity: Low popularity
  • Supply and Demand Status: Limited
  • Maximum Operating Temperature: 150 °C
  • Operating Temperature Range: -55 °C to 150 °C
  • Mount Type: Surface mount
  • RoHS Compliant: Yes

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