The SI7615BDNT-T1-GE3 is an N-Channel MOSFET from Vishay. This MOSFET is designed for high-efficiency power conversion and load switching applications.

Applications:

• DC-DC Converters
• Load Switching
• Power Management
• Synchronous Rectification

Features:

• Low On-Resistance: Minimizes conduction losses for high efficiency.
• Fast Switching Speed: Reduces switching losses for improved performance.
• TrenchFET® Power MOSFET Technology: Provides high power density and efficient power transfer.
• Halogen-free according to IEC 61249-2-21 definition

Benefits:

• High Efficiency: Low on-resistance and fast switching speed minimize power losses.
• Compact Design: Small footprint allows for use in space-constrained applications.
• Improved Thermal Performance: Efficient heat dissipation enhances reliability.

Technical Specifications:

The SI7615BDNT-T1-GE3 has a drain-source voltage (VDS) rating of 30V. The continuous drain current (ID) is 10A at VGS = 10V. The on-resistance (RDS(on)) is typically 7.5 mΩ at VGS = 10V. The gate threshold voltage is typically 2V. It is packaged in a PowerPAK® 1212-8 package.

This MOSFET is well-suited for various power management applications where efficiency and space are critical considerations.