The 1096185-SI7619DN-T1-GE3 is a P-channel MOSFET that comes in a PowerPAK 1212-8 package from Vishay.

• Power dissipation: 3.5W (Ta), 27.8W (Tc)
• Drive voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Temperature range for operating: -55°C to 150°C
• Dimension of PowerPAK 1212-8 is suitable for SMD (SMT) mounting
• Device has a drain-source breakdown voltage of: 30V
• Continuous drain current @ 25°C of: 24A (Tc)
• Gate-source threshold voltage: 3V @ 250μA
• Maximum gate charge: 50nC @ 10V
• Maximum input capacitance: 1350pF @ 15V
• Maximum gate-source voltage: ±20V
• Maximum Rds On @ Id, Vgs: 21 mOhm @ 10.5A, 10V
• Supply and demand status is balanced