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SI7738DP-T1-E3 Real Image SI7738DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI7738DP-T1-E3 Real Image SI7738DP-T1-E3 Real Image
SI7738DP-T1-E3 Real Image SI7738DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7738DP-T1-E3

Part No SI7738DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 30A PPAK SO-8
Datasheet
SI7738DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2100pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 38 mOhm @ 7.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096193-SI7738DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7738DP-T1-E3 CAD Model

Description

The Vishay 1096193-SI7738DP-T1-E3 MOSFET is an N-Channel power MOSFET.

  • Power Dissipation: 5.4W @ 25°C, 96W @ 150°C
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 30A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 53nC @ 10V
  • Maximum Input Capacitance: 2100pF @ 75V
  • Maximum Rds On: 38 mOhm @ 7.7A, 10V
  • Mounting: SMD (SMT)
  • Package: PowerPAK SO-8
  • Category: Discrete Semiconductor Products
  • Popularity: popular

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54+ $2.1506 $116.1324
84+ $2.0834 $175.0056
115+ $2.0162 $231.8630
149+ $1.9489 $290.3861
199+ $1.7473 $347.7127
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