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Same model may have multiple batches, images only for reference.
SI7804DN-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI7804DN-T1-E3

Part No SI7804DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 1212-8
Datasheet
SI7804DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 131493-SI7804DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7804DN-T1-E3 CAD Model

Description

The SI7804DN-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6.5A.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A
  • Maximum On-Resistance: 18.5 mOhm @ 10A and 10V
  • Package: PowerPAK 1212-8
  • Suitable For: Use in various electronic circuits, including power supplies, motor control, and lighting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8277 $57.9390
175+ $0.6791 $118.8425
265+ $0.6580 $174.3700
365+ $0.6368 $232.4320
470+ $0.6155 $289.2850
630+ $0.5519 $347.6970
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Availability: 1,710 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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