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Same model may have multiple batches, images only for reference.
SI7810DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7810DN-T1-GE3

Part No SI7810DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.4A 1212-8 / Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R
Datasheet
SI7810DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs 62 mOhm @ 5.4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 794322-SI7810DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SI7810DN
Introduction Date August 26, 2001
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7810DN-T1-GE3 CAD Model

Description

The Vishay Siliconix electronic component with Id 732651 is a limited supply product.

  • Win Source Part Number: 794322-SI7810DN-T1-GE3
  • MOSFET Technology: MOSFET
  • Power Dissipation: 1.5W (Ta)
  • Alternative Parts Cross-Reference: FDMC3612, IRFHM3911TRPBF, FDMC86106LZ, and DMN10H099SFG-7
  • Maximum Vgs: ±20V
  • Maximum Gate Charge: 17nC @ 10V
  • Estimated EOL date: 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9840 $59.0400
145+ $0.8073 $117.0585
225+ $0.7822 $175.9950
310+ $0.7570 $234.6700
395+ $0.7317 $289.0215
530+ $0.6560 $347.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,900 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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