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SI7844DP-T1-E3

Part No SI7844DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 6.4A 8-Pin PowerPAK SO T/R / MOSFET 2N-CH 30V 6.4A PPAK SO-8
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A
Maximum Rds On at Id,Vgs 22 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 104033-SI7844DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7844DP
Introduction Date March 03, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7844DP-T1-E3 CAD Model

Description

The Vishay 104033-SI7844DP-T1-E3 is a dual N-channel logic level gate FET type electronic component.

  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.4A
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 10A, 10V
  • Case/Package: PowerPAK SO-8 Dual
  • Temperature Range: -55°C to 150°C (TJ)
  • Regulation Compliance: Halogen Free
  • ECCN: EAR99
  • Alternative Parts: refer to the manufacturer's website

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7602 $61.6070
80+ $1.4444 $115.5520
125+ $1.3992 $174.9000
175+ $1.3541 $236.9675
225+ $1.3090 $294.5250
300+ $1.1735 $352.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,125 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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