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SI7850DP-T1-GE3

Part No SI7850DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 6.2A PPAK SO-8 / Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 10.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028673-SI7850DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Family Name Si7850DP
Introduction Date May 23, 2001
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7850DP-T1-GE3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has the Win Source Part Number 028673-SI7850DP-T1-GE3. The supply and demand status is limited, and there are 3k pcs per package. The operating temperature range is between -55°C to 150°C (TJ), and the maximum power dissipation is 1.8W (Ta).

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2132 $54.5940
105+ $0.9955 $104.5275
160+ $0.9644 $154.3040
215+ $0.9333 $200.6595
280+ $0.9022 $252.6160
375+ $0.8088 $303.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 112,202 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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