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SI7886DP-T1

Part No SI7886DP-T1
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 190121-SI7886DP-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7886DP-T1 CAD Model

Description

The SI7886DP-T1 is a P-Channel 20-V (D-S) MOSFET from Vishay Siliconix, designed for load switching and other power management applications. It is optimized for low on-resistance, enabling efficient power conversion and minimizing power loss in portable devices and systems. The "-T1" suffix indicates tape and reel packaging for automated assembly.

Applications:

  • Load Switching: Ideal for high-side load switching in battery-powered devices.
  • Power Management: Used in DC-DC converters and power management circuits.
  • Portable Devices: Suitable for smartphones, tablets, and other portable electronics.
  • Battery Management: Employed in battery charging and discharging circuits.
  • Motor Control: Low-power motor control applications.

Features:

  • Low On-Resistance: Minimizes conduction losses for improved efficiency.
  • Low Threshold Voltage: Enables operation with low gate drive voltage.
  • TrenchFET® Power MOSFET: Utilizes advanced trench technology for high power density.
  • 20V Drain-Source Voltage: Suitable for applications up to 20V.
  • Small Footprint: Available in a space-saving powerPAK® SO-8 package.
  • Tape and Reel Packaging (-T1): Designed for automated pick and place assembly.

Benefits:

  • High Efficiency: Reduced power loss leads to improved efficiency in power conversion.
  • Extended Battery Life: Lower power consumption extends battery life in portable devices.
  • Compact Design: Small package size allows for dense circuit designs.
  • Simplified Drive Circuitry: Low threshold voltage simplifies gate drive requirements.
  • Improved Thermal Performance: PowerPAK® SO-8 package offers enhanced thermal dissipation.
  • Automated Assembly: Tape and reel packaging facilitates high-volume manufacturing.

Additional Details:

The SI7886DP-T1 features a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. The on-resistance (RDS(on)) is typically very low, enhancing the device's efficiency. The operating junction temperature range is typically -55°C to +150°C. It is available in a PowerPAK® SO-8 package, ensuring efficient thermal management. This MOSFET is designed to be RoHS-compliant and halogen-free, aligning with environmental standards. The “-T1” suffix signifies that the components are provided in Tape and Reel packaging for use in automated assembly processes. The core specifications and performance characteristics are the same as the SI7886DP.

The SI7886DP-T1's low on-resistance, compact package, and tape and reel packaging make it an excellent choice for efficient power management in a variety of applications, particularly in portable devices where battery life is critical and automated assembly is required. Its robust design and compliance with environmental standards further enhance its suitability for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9277 $57.8310
75+ $1.5824 $118.6800
115+ $1.5327 $176.2605
160+ $1.4830 $237.2800
205+ $1.4334 $293.8470
270+ $1.2855 $347.0850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,180 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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