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Same model may have multiple batches, images only for reference.
SI7892BDP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7892BDP-T1-E3

Part No SI7892BDP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A PPAK SO-8
Datasheet
SI7892BDP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 3775pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028686-SI7892BDP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7892BDP-T1-E3 CAD Model

Description

The SI7892BDP-T1-E3 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A
  • Power Dissipation: 1.8W
  • Gate-Source Threshold Voltage: 3V
  • Maximum Gate Charge: 40nC @ 4.5V
  • Package: PowerPAK SO-8
  • Mounting Technology: SMT

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9277 $60.3005
155+ $0.7613 $118.0015
235+ $0.7375 $173.3125
325+ $0.7137 $231.9525
420+ $0.6899 $289.7580
565+ $0.6185 $349.4525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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