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SI7923DN-T1-GE3

Part No SI7923DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 30V 4.3A 8-Pin PowerPAK 1212 T/R / MOSFET 2P-CH 30V 4.3A 1212-8
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 47 mOhm @ 6.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 21nC @ 10V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 028694-SI7923DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7923DN
Introduction Date December 04, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7923DN-T1-GE3 CAD Model

Description

The Vishay Si7923DN-T1-GE3 is a dual 2 P-channel FET that features logic level gate and operates in the temperature range of -55°C to 150°C (TJ).

  • Mounting: PowerPAK 1212-8 Dual package
  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.3A
  • Gate-Source Threshold Voltage: 3V @ 250µA
  • Maximum Gate Charge @ 10V: 21nC
  • Alternative Part: QS8J4, QS8J4TR, Si7923DN-E3, SI7905DN-T1-GE3, and DMP4050SSD-13
  • ECCN: EAR99
  • Origin: United States
  • Estimated EOL date: 2027
  • Halogen-Free Compliant: True

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1397 $51.2865
95+ $1.0662 $101.2890
150+ $1.0295 $154.4250
210+ $0.9559 $200.7390
275+ $0.9192 $252.7800
340+ $0.8824 $300.0160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,387 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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