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Same model may have multiple batches, images only for reference.
SI7949DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7949DP-T1-GE3

Part No SI7949DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 60V 3.2A PPAK SO-8 / Mosfet Array 60V 3.2A 1.5W Surface Mount PowerPAK? SO-8 Dual
Datasheet
SI7949DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 64mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Power - Max 1.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Base Product Number SI7949
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 850198-SI7949DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7949DP-T1-GE3 CAD Model

Description

The 850198-SI7949DP-T1-GE3 is a dual P-channel MOSFET array from the TrenchFET series. It is manufactured by Vishay.

  • Channel Type: Dual P-Channel
  • Series: TrenchFET
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 3.2A
  • On-Resistance: 64mΩ @ Max Current and Gate Voltage
  • Gate Type: Logic Level
  • Mounting Type: Surface Mount
  • Package: PowerPAK SO-8 Dual
  • Gate Charge: 40nC @ 10V
  • Operating Temperature: -55°C to 150°C

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85+ $1.2484 $106.1140
125+ $1.2094 $151.1750
175+ $1.1704 $204.8200
225+ $1.1314 $254.5650
300+ $1.0143 $304.2900
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