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Same model may have multiple batches, images only for reference.
SI8802DB-T2-E1 Vishay
Same model may have multiple batches, images only for reference.

SI8802DB-T2-E1

Part No SI8802DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V MICROFOOT / Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R
Datasheet
SI8802DB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Vgs(th) (Maximum) @ Id 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 6.5nC @ 4.5V
Vgs (Maximum) ±5V
Power Dissipation (Maximum) 500mW (Ta)
Rds On (Maximum) @ Id, Vgs 54 mOhm @ 1A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 4-Microfoot
Package 4-XFBGA
Win Source Part Number 794380-SI8802DB-T2-E1
Popularity Medium
Supply and Demand Status Balance
Family Name Si8802DB
Introduction Date July 28, 2011
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI8802DB-T2-E1 CAD Model

Description

The Vishay Siliconix Si8802DB-T2-E1 is a Vishay Siliconix MOSFET transistor designed for use in discrete semiconductor products.

  • Series: TrenchFET
  • Package: 4-XFBGA
  • Transistor Type: N-channel
  • Maximum Drain Source Voltage: 8V
  • Gate Charge @ 4.5V: 6.5nC
  • Maximum Power Dissipation: 500mW
  • Rds On: 54 mOhm @ 1A @ 4.5V
  • Introduction Date: July 28, 2011
  • Estimated EOL Date: 2027
  • Manufacturing Location: United States of America
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6310 $50.4800
195+ $0.5177 $100.9515
300+ $0.5016 $150.4800
415+ $0.4854 $201.4410
535+ $0.4692 $251.0220
715+ $0.4207 $300.8005
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MOQ: 80 pcs
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