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SI8806DB-T2-E1

Part No SI8806DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 43mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Vgs (Max) ±8V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA
Base Product Number SI8806
Other Names SI8806DB-T2-E1CT,SI8806DB-T2-E1DKR,SI8806DB-T2-E1TR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277584-SI8806DB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8806DB-T2-E1 CAD Model

Description

The SI8806DB-T2-E1 is a n-channel MOSFET transistor from the TrenchFET series of Vishay Siliconix.

  • Designed for: use in discrete semiconductor products such as transistors, FETs, and MOSFETs
  • Drain to source voltage: 12 V
  • Continuous drain current: 2.8A (Ta)
  • Maximum on-resistance: 43mOhm @ 1A, 4.5V
  • Mounting: using SMD (SMT) technology
  • Package: 4-XFBGA package
  • Gate charge: 17 nC @ 8 V
  • Maximum Vgs: ±8V
  • Temperature range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • Ideal for: use in a wide range of applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8150 $52.9750
150+ $0.6687 $100.3050
235+ $0.6478 $152.2330
320+ $0.6269 $200.6080
415+ $0.6060 $251.4900
555+ $0.5433 $301.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,270 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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