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Same model may have multiple batches, images only for reference.
SI8810EDB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8810EDB-T2-E1

Part No SI8810EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.1A MICROFOOT
Datasheet
SI8810EDB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 20 V 2.1A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Manufacturer Vishay
Series TrenchFET®
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 4-XFBGA
Case / Package 4-Microfoot
Family Name SI8810
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number SI8810EDB-T2-E1TR, SI8810EDB-T2-E1CT, SI8810EDB-T2-E1DKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 874130-SI8810EDB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8810EDB-T2-E1 CAD Model

Description

The Vishay SI8810EDB-T2-E1 is a TrenchFET series N-Channel MOSFET designed for surface mount applications.

  • Package: 4-XFBGA package
  • Maximum power dissipation: 2.1A (Ta) 500mW (Ta)
  • Gate-source threshold voltage: 2.3V @ 250μA
  • Maximum gate charge: 90nC @ 10V
  • Maximum input capacitance: 3800pF @ 10V
  • Maximum Rds On @ Id, Vgs: 2.8 mOhm @ 15A, 10V
  • Product Popularity: medium popular
  • Supply and demand status: limited
  • Quantity per package: 3000
  • Estimated production lead time: 51 weeks
  • REACH status: unaffected

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