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Same model may have multiple batches, images only for reference.
SI8901EDB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8901EDB-T2-E1

Part No SI8901EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.5A 6-MFP
Datasheet
SI8901EDB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A
Gate-Source Threshold Voltage 1V @ 350μA
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-Micro Foot
Win Source Part Number 100849-SI8901EDB-T2-E1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI8901EDB-T2-E1 CAD Model

Description

The Vishay SI8901EDB-T2-E1 is a dual P-channel FET transistor that is designed for use in various applications such as power management, load switches, and battery protection circuits.

  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.5A
  • Gate-Source Threshold Voltage: 1V @ 350μA
  • Package: 6-Micro Foot
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8581 $65.0335
80+ $1.5246 $121.9680
120+ $1.4770 $177.2400
165+ $1.4294 $235.8510
210+ $1.3818 $290.1780
280+ $1.2388 $346.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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