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SI8902EDB

Part No SI8902EDB
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Bi-Directional N-Channel 20-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1249655-SI8902EDB
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI8902EDB CAD Model

Description

The SI8902EDB is an isolated gate driver manufactured by Vishay. This device is designed to drive power MOSFETs and IGBTs in applications requiring galvanic isolation between the control circuitry and the power stage. It provides a high level of isolation and robust performance, making it suitable for a variety of industrial and automotive applications.

Applications:

  • Isolated power supplies: Providing isolation between the primary and secondary sides of power converters.
  • Motor drives: Driving IGBTs in motor control applications.
  • Renewable energy systems: Driving power switches in solar inverters and wind turbine converters.
  • Industrial automation: Driving power devices in industrial control systems.
  • Electric vehicles: Driving MOSFETs in automotive power systems.

Features:

  • Galvanic isolation: Provides high voltage isolation between input and output.
  • High drive strength: Capable of driving large power MOSFETs and IGBTs.
  • Short propagation delay: Enables high-frequency operation.
  • Under-voltage lockout (UVLO): Protects power devices from operating at insufficient voltage.
  • Over-temperature protection (OTP): Protects the device from overheating.

Benefits:

  • Improved safety: Galvanic isolation protects users and equipment from high voltages.
  • Enhanced system performance: High drive strength and short propagation delay enable efficient power switching.
  • Increased system reliability: UVLO and OTP features protect the device and connected power devices.
  • Simplified circuit design: Integrated functionality reduces the need for external components.
  • Reduced system cost: Integrated protection features eliminate the need for external protection circuits.

The SI8902EDB features a high isolation voltage of up to 5 kVrms. It offers a peak output current of up to 4 A. The device also incorporates an under-voltage lockout (UVLO) feature to prevent the power devices from operating at insufficient voltage levels, and an over-temperature protection (OTP) feature to protect the device from overheating. The SI8902EDB is available in a small SOIC-8 package.

The SI8902EDB's high level of isolation and robust performance make it a reliable choice for driving power devices in demanding applications. Its integrated protection features further enhance its reliability and simplify system design.

In summary, the SI8902EDB isolated gate driver from Vishay is a high-performance device designed for driving power MOSFETs and IGBTs in applications requiring galvanic isolation. Its high isolation voltage, high drive strength, and integrated protection features make it an ideal choice for improving safety, enhancing system performance, and increasing system reliability in a variety of industrial and automotive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5267 $57.9370
270+ $0.4320 $116.6400
415+ $0.4193 $174.0095
570+ $0.4054 $231.0780
740+ $0.3915 $289.7100
990+ $0.3511 $347.5890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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