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Same model may have multiple batches, images only for reference.
SI9410BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI9410BDY-T1-GE3

Part No SI9410BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.2A 8SOIC
Datasheet
SI9410BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 23nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 8.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 131776-SI9410BDY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI9410BDY-T1-GE3 CAD Model

Description

The SI9410BDY-T1-GE3 is an obsolete (EOL), medium popularity, limited supply and demand electronic component manufactured by Vishay.

  • Type: MOSFET
  • Win Source Part Number: 131776-SI9410BDY-T1-GE3
  • Maximum Power Dissipation: 1.5W (Ta)
  • Channel: N-Channel type
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 24 mOhm @ 8.1A, 10V
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0407 $60.4070
24+ $4.9561 $118.9464
37+ $4.8013 $177.6481
50+ $4.6466 $232.3300
65+ $4.4918 $291.9670
87+ $4.0275 $350.3925
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