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SI9424BDY-T1-E3

Part No SI9424BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±9V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 127601-SI9424BDY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian SI9424BDY-T1-E3 CAD Model

Description

The Vishay 127601-SI9424BDY-T1-E3 is a P-Channel MOSFET designed for SMD (SMT) mounting.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 5.6A (Ta)
  • Gate-Source Threshold Voltage: 850mV @ 250μA
  • Max Gate Charge: 40nC @ 4.5V
  • Package: 8-SOIC (0.154", 3.90mm Width) package
  • Manufacturer Package: 8-SO
  • Operating Temperature: -55°C to 150°C (TJ)
  • Family: discrete semiconductor products
  • Packaging: reel - TR packaging
  • Quantity per Package: 2,500
  • Supply and demand status: balanced
  • Status: obsolete (EOL).

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3419 $58.1230
415+ $0.2807 $116.4905
640+ $0.2714 $173.6960
880+ $0.2633 $231.7040
1,140+ $0.2541 $289.6740
1,525+ $0.2275 $346.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,230 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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