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Same model may have multiple batches, images only for reference.
SI9435BDY-TI-E3 Vishay
Same model may have multiple batches, images only for reference.

SI9435BDY-TI-E3

Part No SI9435BDY-TI-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V 4.1A 8-SOIC
Datasheet
SI9435BDY-TI-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Vishay
Series TrenchFET
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Rds On (Max) @ Id, Vgs 42 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Power - Max 1.3W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 190179-SI9435BDY-TI-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI9435BDY-TI-E3 CAD Model

Description

The Vishay SI9435BDY-TI-E3 is a MOSFET P-Channel, Metal Oxide transistor component from the TrenchFET series.

  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 4.1A (Ta) @ 25°C
  • Maximum Rds On: 42 mOhm @ 5.7A, 10V
  • Gate Charge (Qg): 24nC @ 10V
  • Power Rating: 1.3W

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