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SI9926BDY-T1-E3

Part No SI9926BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 6.2A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.2A
Maximum Rds On at Id,Vgs 20 mOhm @ 8.2A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 20nC @ 4.5V
Maximum Power Dissipation 1.14W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 109807-SI9926BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI9926BDY-T1-E3 CAD Model

Description

The Vishay 2 N-Channel (Dual) Discrete Semiconductor Products is a high-quality component that is perfect for use in a variety of electronic devices.

  • Maximum Power Dissipation: 1.14W
  • Continuous Drain Current: 6.2A

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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