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Same model may have multiple batches, images only for reference.
SI9933BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI9933BDY-T1-E3

Part No SI9933BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.6A 8-SOIC
Datasheet
SI9933BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 113795-SI9933BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI9933BDY-T1-E3 CAD Model

Description

The Vishay SI9933BDY-T1-E3 is a dual P-Channel logic level gate FET that is designed for use in a variety of applications.

  • Maximum power dissipation: 1.1W
  • Drain-source breakdown voltage: 20V
  • Continuous drain current: 3.6A @ 25°C
  • Gate-source threshold voltage: 1.4V @ 250μA
  • Maximum Rds On at Id, Vgs: 60 mOhm @ 4.7A, 4.5V
  • Package: 8-SO
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,480 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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