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Same model may have multiple batches, images only for reference.
SIA419DJ-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIA419DJ-T1-GE3

Part No SIA419DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A SC70-6
Datasheet
SIA419DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 29nC @ 5V
Max Input Capacitance 1500pF @ 10V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 5.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 106526-SIA419DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA419DJ-T1-GE3 CAD Model

Description

The SIA419DJ-T1-GE3 is a P-channel MOSFET manufactured by Vishay.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 12A (Tc)
  • Gate-Source Threshold Voltage: 850mV @ 250μA
  • Maximum Rds On at Id, Vgs: 30 mOhm @ 5.9A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5818 $63.2720
90+ $1.2979 $116.8110
140+ $1.2573 $176.0220
190+ $1.2168 $231.1920
250+ $1.1763 $294.0750
330+ $1.0545 $347.9850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,460 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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