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Same model may have multiple batches, images only for reference.
SIA425EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA425EDJ-T1-GE3

Part No SIA425EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.5A SC-70-6
Datasheet
SIA425EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 028720-SIA425EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA425EDJ-T1-GE3 CAD Model

Description

The SIA425EDJ-T1-GE3 is a P-channel MOSFET from Vishay with a power dissipation (max) of 2.9W (Ta), 15.6W (Tc).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 60 mOhm @ 4.2A, 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Package: PowerPAK SC-70-6 Single
  • Mounting: Surface mounting

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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