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SIA430DJT-T4-GE3

Part No SIA430DJT-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA430
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277534-SIA430DJT-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA430DJT-T4-GE3 CAD Model

Description

The Vishay 1277534-SIA430DJT-T4-GE3 is a MOSFET transistor that has a tape & reel (TR) packaging.

  • Mounting: SMD (SMT)
  • Category: discrete semiconductor products>transistors - FETs, MOSFETs - single
  • Series: TrenchFET®
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
  • Package / Case: PowerPAK® SC-70-6
  • Supplier Device Package: PowerPAK® SC-70-6
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
  • Vgs (Max): ±20V
  • Temperature Range - Operating: -55°C ~ 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095
  • Manufacturer: Vishay Siliconix
  • Base Product Number: SIA430
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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