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SIA438EDJ-T1-GE3

Part No SIA438EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V
Power Dissipation (Max) 2.4W (Ta), 11.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA438
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277535-SIA438EDJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA438EDJ-T1-GE3 CAD Model

Description

The Vishay Siliconix 1277535-SIA438EDJ-T1-GE3 is a N-channel MOSFET transistor that is designed to work in a wide range of applications.

  • Drain-to-Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
  • Maximum Power Dissipation: 2.4W (Ta), 11.4W (Tc)
  • Package: PowerPAK® SC-70-6 package
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3127 $57.8495
455+ $0.2566 $116.7530
700+ $0.2486 $174.0200
965+ $0.2406 $232.1790
1,245+ $0.2325 $289.4625
1,665+ $0.2085 $347.1525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,270 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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