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Same model may have multiple batches, images only for reference.
SIA450DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA450DJ-T1-GE3

Part No SIA450DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 1.52A SC70-6
Datasheet
SIA450DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 240V
Continuous Drain Current at 25°C 1.52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 7.04nC @ 10V
Max Input Capacitance 167pF @ 120V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.3W (Ta), 15W (Tc)
Maximum Rds On at Id,Vgs 2.9 Ohm @ 700mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 064628-SIA450DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SIA450DJ-T1-GE3 CAD Model

Description

The Vishay MOSFET is a powerful N-channel polarity semiconductor product that is ideal for use in industrial, power management, and portable devices.

  • Maximum Power Dissipation: 3.3W (Ta), 15W (Tc)
  • Drain-Source Breakdown Voltage: 240V
  • Maximum Rds on at Id,Vgs: 2.9 Ohm @ 700mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2825 $59.0850
43+ $2.6935 $115.8205
67+ $2.6091 $174.8097
92+ $2.5248 $232.2816
119+ $2.4405 $290.4195
159+ $2.1887 $348.0033
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,930 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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