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Same model may have multiple batches, images only for reference.
SIA459EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA459EDJ-T1-GE3

Part No SIA459EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 9A SC70
Datasheet
SIA459EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 885pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 5A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096378-SIA459EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA459EDJ-T1-GE3 CAD Model

Description

The Vishay 453984 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 9A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 9A @ 25°C
  • Maximum Rds On: 35 mOhm @ 5A and 4.5V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 30nC @ 10V
  • Case/Package: PowerPAK SC-70-6 Single
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Applications: Discrete Semiconductor Products

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