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Same model may have multiple batches, images only for reference.
SIA517DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA517DJ-T1-GE3

Part No SIA517DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 12V 4.5A SC-70-6
Datasheet
SIA517DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 29 mOhm @ 5A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 8V
Max Input Capacitance 500pF @ 6V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 093787-SIA517DJ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiA517DJ
Introduction Date May 25, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SIA517DJ-T1-GE3 CAD Model

Description

The Vishay 093787-SIA517DJ-T1-GE3 is an N and P-channel FET with a logic level gate feature.

  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current at 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 15nC @ 8V
  • Maximum Input Capacitance: 500pF @ 6V
  • Maximum Rds on at Id,Vgs: 29 mOhm @ 5A, 4.5V
  • Packaging: PowerPAK SC-70-6 Dual

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2702 $51.3380
400+ $0.2531 $101.2400
615+ $0.2446 $150.4290
880+ $0.2275 $200.2000
1,145+ $0.2189 $250.6405
1,430+ $0.2104 $300.8720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71,934 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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