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SIA817EDJ-T1-GE3

Part No SIA817EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.5A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 600pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Dimension PowerPAK SC-70-6 Dual
Win Source Part Number 1096384-SIA817EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA817EDJ-T1-GE3 CAD Model

Description

The Vishay SIA817EDJ-T1-GE3 is a P-Channel MOSFET with a Schottky diode (body) feature.

  • Mounting: surface mount device (SMD)
  • Package: PowerPAK SC-70-6 dual
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.5A
  • Drive Voltage: 2.5V and 10V for maximum Rds On and minimum Rds On respectively
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Input Capacitance: 600pF @ 15V
  • Operating Temperature: -55°C to 150°C
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4669 $51.3415
85+ $1.2036 $102.3060
130+ $1.1660 $151.5800
180+ $1.1284 $203.1120
230+ $1.0908 $250.8840
310+ $0.9780 $303.1800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,750 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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