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Same model may have multiple batches, images only for reference.
SIA921EDJ-T4-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA921EDJ-T4-GE3

Part No SIA921EDJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA921EDJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 59mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Power - Max 7.8W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA921
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278479-SIA921EDJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA921EDJ-T4-GE3 CAD Model

Description

The Vishay Siliconix SIA921EDJ-T4-GE3 is a high-quality MOSFET transistor array from Vishay Siliconix.

  • FET Type: Dual P-channel
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4.5A @ 25°C
  • Rds On: 59mOhm @ 3.6A, 4.5V
  • Vgs(th): 1.4V @ 250μA
  • Maximum Power: 7.8W
  • Gate Charge: 23nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0046 $50.2300
125+ $0.8243 $103.0375
190+ $0.7986 $151.7340
260+ $0.7728 $200.9280
335+ $0.7471 $250.2785
450+ $0.6698 $301.4100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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