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Same model may have multiple batches, images only for reference.
SIA922EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA922EDJ-T1-GE3

Part No SIA922EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4.5A SC70-6
Datasheet
SIA922EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 64 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 12nC @ 10V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 1096387-SIA922EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIA922EDJ-T1-GE3 CAD Model

Description

This dual N-channel FET is a logic level gate type with a maximum power dissipation of 7.8W and a drain-source breakdown voltage of 30V.

  • Power Dissipation: 7.8W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Rds On @ Id,Vgs: 64 mOhm @ 3A, 4.5V
  • Package: PowerPAK SC-70-6 Dual
  • Temperature Range of Operation: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9196 $59.7740
155+ $0.7546 $116.9630
240+ $0.7310 $175.4400
330+ $0.7075 $233.4750
425+ $0.6839 $290.6575
570+ $0.6131 $349.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,567 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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