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Same model may have multiple batches, images only for reference.
SIA922EDJ-T4-GE3
Same model may have multiple batches, images only for reference.

SIA922EDJ-T4-GE3

Part No SIA922EDJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA922EDJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs 64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Power - Max 1.9W (Ta), 7.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA922
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278473-SIA922EDJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA922EDJ-T4-GE3 CAD Model

Description

The Vishay Siliconix SIA922EDJ-T4-GE3 is a dual N-Channel MOSFET transistor designed for use in discrete semiconductor products, specifically in transistors - FETs, MOSFETs - Arrays.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 4.4A @ 25°C
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
  • Gate Charge: 12nC @ 10V
  • Power Dissipation: 1.9W (Ta), 7.8W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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