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Same model may have multiple batches, images only for reference.
SIA928DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA928DJ-T1-GE3

Part No SIA928DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA928DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 15V
Power - Max 7.8W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA928
Other Names SIA928DJ-T1-GE3DKR,SIA928DJ-T1-GE3CT,SIA928DJ-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278492-SIA928DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA928DJ-T1-GE3 CAD Model

Description

Vishay Siliconix SIA928DJ-T1-GE3 is a dual N-Channel MOSFET that is designed for use in a wide range of applications, including power management, motor control, and lighting.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 4.5A
  • Low On-Resistance: 25mOhm
  • Gate Charge: 4.5nC
  • Input Capacitance: 490pF
  • Operating Temperature Range: -55°C to 150°C

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