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Same model may have multiple batches, images only for reference.
SIDR104ADP-T1-RE3
Same model may have multiple batches, images only for reference.

SIDR104ADP-T1-RE3

Part No SIDR104ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR104ADP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 50 V
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR104
Other Names 742-SIDR104ADP-T1-RE3CT,742-SIDR104ADP-T1-RE3TR,742-SIDR104ADP-T1-RE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277587-SIDR104ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIDR104ADP-T1-RE3 CAD Model

Description

The Vishay Siliconix 1277587-SIDR104ADP-T1-RE3 is an N-channel MOSFET transistor.

  • Drain to source voltage: 100 volts
  • Current rating: 18.8A @ 25°C
  • Package type: Tape & Reel
  • Supplier device package: PowerPAK® SO-8DC
  • Maximum on-resistance: 6.1mOhm @ 15A and 10V gate-source voltage
  • Maximum gate charge: 70nC @ 10V
  • Input capacitance: 3250pF @ 50Vds
  • Operating temperature range: from -55°C to 150°C
  • Suitable for: use in various applications such as power management, motor control, and load switching

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