The SIDR610DP-T1-GE3 is a MOSFET transistor that is a part of the TrenchFET series from an unspecified manufacturer.

• Series: TrenchFET
• Mounting Type: Surface Mount
• Package: Tape & Reel
• Standard Package: 3,000
• Technology: MOSFET (Metal Oxide)
• Channel Type: N-Channel
• Drain to Source Voltage (Vdss): 200 V
• Power Dissipation: 6.25W (Ta), 125W (Tc)
• Vgs (Max): ±20V
• Temperature Range: -55°C to 150°C (TJ)
• Drive Voltage: 7.5V, 10V
• Current - Continuous Drain (Id): 8.9A (Ta) @ 25°C, 39.6A (Tc) @ 25°C
• Rds On (Max): 31.9mOhm @ 10A, 10V
• Vgs(th) (Max): 4V @ 250μA
• Gate Charge (Qg) (Max): 38 nC @ 10 V
• Input Capacitance (Ciss) (Max): 1380 pF @ 100 V