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Same model may have multiple batches, images only for reference.
SIDR626DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIDR626DP-T1-GE3

Part No SIDR626DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIDR626DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
Base Product Number SIDR626
Other Names SIDR626DP-T1-GE3TR,SIDR626DP-T1-GE3DKR,SIDR626DP-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277628-SIDR626DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIDR626DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SIDR626DP-T1-GE3 is a MOSFET transistor that comes with unique features and capabilities.

  • FET Type: N-Channel
  • Series: TrenchFET Gen IV
  • Package: PowerPAK SO-8 case
  • Maximum Power Dissipation: 6.25W

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9764 $59.2920
75+ $1.6216 $121.6200
115+ $1.5710 $180.6650
155+ $1.5204 $235.6620
200+ $1.4696 $293.9200
265+ $1.3176 $349.1640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 190 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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