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Same model may have multiple batches, images only for reference.
SIE802DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE802DF-T1-GE3

Part No SIE802DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7000 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE802
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277531-SIE802DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE802DF-T1-GE3 CAD Model

Description

The Vishay Siliconix SIE802DF-T1-GE3 is a MOSFET transistor that is widely used for single-channel applications.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 1.9mOhm @ 23.6A and 10V
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 15 V
  • Temperature Range: between -55°C to 150°C (TJ)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0533 $58.0127
47+ $2.5053 $117.7491
72+ $2.4270 $174.7440
99+ $2.3487 $232.5213
128+ $2.2704 $290.6112
171+ $2.0356 $348.0876
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Availability: 4,100 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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