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Same model may have multiple batches, images only for reference.
SIE818DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE818DF-T1-GE3

Part No SIE818DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE818DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 38 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE818
Other Names SIE818DFT1GE3,SIE818DF-T1-GE3DKR,SIE818DF-T1-GE3CT,SIE818DF-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277591-SIE818DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE818DF-T1-GE3 CAD Model

Description

The SIE818DF-T1-GE3 is a N-channel MOSFET transistor from Vishay Siliconix.

  • Drain to source voltage (Vdss): 75V
  • Continuous drain current (Id): 60A
  • On-resistance (Rds On): 9.5mOhm
  • Gate charge (Qg): 95nC
  • Designed for: use in a variety of electronic circuits
  • Widely available: yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4270 $58.2590
42+ $2.8120 $118.1040
64+ $2.7241 $174.3424
88+ $2.6362 $231.9856
114+ $2.5484 $290.5176
152+ $2.2847 $347.2744
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,550 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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