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Same model may have multiple batches, images only for reference.
SIE882DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE882DF-T1-GE3

Part No SIE882DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE882DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 12.5 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (L)
Package / Case 10-PolarPAK® (L)
Base Product Number SIE882
Other Names SIE882DF-T1-GE3DKR,SIE882DF-T1-GE3,SIE882DF-T1-GE3TR,SIE882DF-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277593-SIE882DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE882DF-T1-GE3 CAD Model

Description

The Vishay Siliconix SIE882DF-T1-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 25V.

  • Continuous Drain Current: 60A (Tc)
  • Maximum On-Resistance: 1.4mOhm @ 20A and 10V
  • Gate Charge: 145nC @ 10V
  • Designed for: SMD (SMT) applications
  • Temperature Range: -55°C to 150°C (TJ)
  • Available in: tape & reel packages
  • Package/Case Type: 10-PolarPAK® (L)
  • Reliable solution for: FET applications

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