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SIF912EDZ-T1-E3

Part No SIF912EDZ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7.4A 6-POWERPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.4A
Maximum Rds On at Id,Vgs 19 mOhm @ 7.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK (2x5)
Win Source Part Number 099778-SIF912EDZ-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIF912EDZ-T1-E3 CAD Model

Description

The 099778-SIF912EDZ-T1-E3 is a dual N-channel common drain FET product from Vishay.

  • Mounting Type: SMD (SMT)
  • Packaging: reel-TR
  • Popularity: medium
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.4A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds On: 19 mOhm @ 7.4A, 4.5V
  • Temperature Range (TJ): -55°C to 150°C
  • Case/Package: PowerPAK (2x5)
  • Product Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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