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Same model may have multiple batches, images only for reference.
SIHA11N80AE-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA11N80AE-GE3

Part No SIHA11N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA11N80AE-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA11
Other Names 742-SIHA11N80AE-GE3TR,742-SIHA11N80AE-GE3CT,742-SIHA11N80AE-GE3DKR,742-SIHA11N80AE-GE3TR,742-SIHA11N80AE-GE3,742-SIHA11N80AE-GE3CT,742-SIHA11N80AE-GE3DKR
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277716-SIHA11N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA11N80AE-GE3 CAD Model

Description

The SIHA11N80AE-GE3 is a single N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0263 $50.6575
61+ $1.6626 $101.4186
94+ $1.6107 $151.4058
129+ $1.5587 $201.0723
166+ $1.5068 $250.1288
223+ $1.3509 $301.2507
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,700 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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