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Same model may have multiple batches, images only for reference.
SIHA120N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA120N60E-GE3

Part No SIHA120N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA120N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1562 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA120
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277777-SIHA120N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA120N60E-GE3 CAD Model

Description

The Vishay SIHA120N60E-GE3 is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Package: TO-220-3 Full Pack
  • Temperature Range: -55°C to 150°C
  • Drain to Source Voltage (Vdss): 600V
  • Current Rating: 25A (Tc)
  • Power Dissipation: 34W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V

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